Enhancement of quantum well intermixing on InP∕InGaAs∕InGaAsP heterostructures using titanium oxide surface stressors to induce forced point defect diffusion

low-confinement SOAs using quantum well intermixing and MOCVD regrowth

Photonic receivers integrating unitravelling carrier (UTC) photodiodes with high saturation power=high gain semiconductor optical amplifiers (SOAs) are presented. The SOAs demonstrated up to 28 dB of gain with saturation output powers of up to 18.6 dBm, while the UTC photodiodes were capable of 40 Gbit=s operation under high photocurrent operation. The chip-coupled receiver sensitivity was bett...

Quantum well intermixing in GaInNAs/GaAs structures

Photonic integrated circuits based on quantum well intermixing techniques

The passive sections of a monolithic device must have a wider bandgap than the active regions to reduce losses due to direct interband absorption. Such bandgap engineering is usually realized by complicated regrown butt-joint or selective-area growth techniques. We, however, have developed a simple, flexible and low-cost alternative technique – quantum well intermixing (QWI) – to increase the b...

Defect Induced Diffusion Mechanisms in Ion Implanted Quantum Well Structures

The present paper describes a method for utilizing X-ray diiraction measurements to determine the diiusion constant D associated with a speciic diffusion mechanism. In particular, for Cd 1?x Mn x Te quantum well structures a value of D 0:5 A 2 s ?1 was obtained for a vacancy controlled diiusion process.

Study of intermixing in a GaAsÕAlGaAs quantum-well structure using doped spin-on silica layers

The effect of two different dopants, P and Ga, in spin-on glass ~SOG! films on impurity-free vacancy disordering ~IFVD! in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-dope...